FGH75T65SQDT-F155, IGBT Transistors 650V 40A FS4 TRENCH IGBT
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
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Технические параметры
| Brand: | onsemi |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 150 A |
| Factory Pack Quantity: | 450 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 375 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 800 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
