IRF540ZPBF, MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg

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Номенклатурный номер: 8005401847

Артикул: IRF540ZPBF

Описание Транзистор: N-MOSFET, полевой, 100В, 36А, 92Вт, TO220AB Характеристики

Continuous Drain Current (Id) @ 25В°C	36A(Tc)
Power Dissipation-Max (Ta=25В°C)	92W(Tc)
Rds On - Drain-Source Resistance	26.5mО© @ 22A,10V
Transistor Polarity	N Channel
Vds - Drain-Source Breakdown Voltage	100V
Vgs - Gate-Source Voltage	4V @ 250uA
Current - Continuous Drain (Id) @ 25В°C	36A(Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1770pF @ 25V
Manufacturer	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	92W(Tc)
Rds On (Max) @ Id, Vgs	26.5mOhm @ 22A, 10V
Series	HEXFETВ®
Supplier Device Package	TO-220AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Resistance	27 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	92 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	42 nC @ 10 V
Width	4.69mm
Вес, г	6