2N5232A PBFREE, Bipolar Transistors - BJT NPN Gen Pur SS

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4732 шт., срок 6-8 недель

140 руб.

от 10 шт. — 120 руб.

от 100 шт. — 76 руб.

от 500 шт. — 55.68 руб.

Добавить в корзину 1 шт. на сумму 140 руб.

Номенклатурный номер: 8004700451

Артикул: 2N5232A PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 50V 100mA 625mW Through Hole TO-92

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	70 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	125 mV
Configuration:	Single
Continuous Collector Current:	100 mA
DC Collector/Base Gain hfe Min:	250
DC Current Gain hFE Max:	500
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	30nA
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 2mA, 5V
ECCN	EAR99
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	625mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	125mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	0.45