Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Toshiba › TK065N65Z,S1F, MOSFET 270W 1MHz TO-247

TK065N65Z,S1F, MOSFET 270W 1MHz TO-247

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85 шт., срок 6-8 недель

1 830 руб.

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Номенклатурный номер: 8005269332

Артикул: TK065N65Z,S1F

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

DTMOSVI MOSFETs Toshiba DTMOSVI MOSFETs offer a low drain-source on-resistance of 0.033Ω (typical), a drain-source voltage of 650V, and a drain current of 57A. The DTMOSVI MOSFETs offer high-speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	30
Fall Time:	4.2 ns
Id - Continuous Drain Current:	30 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-247-3
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	270 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	62 nC
Rds On - Drain-Source Resistance:	65 mOhms
Rise Time:	62 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	130 ns
Typical Turn-On Delay Time:	110 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	6