2N4401 PBFREE

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5786 шт., срок 6-8 недель

140 руб.

Мин. кол-во для заказа 2 шт.

от 10 шт. — 120 руб.

от 100 шт. — 76 руб.

от 2500 шт. — 37.89 руб.

Добавить в корзину 2 шт. на сумму 280 руб.

Альтернативные предложения1

Номенклатурный номер: 8006117382

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single

Биполярный (BJT) транзистор NPN 40V 600mA 250MHz 625mW Through Hole TO-92

Current - Collector (Ic) (Max)	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 1V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	625mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	40V
Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	750 mV
Configuration:	Single
Continuous Collector Current:	600 mA
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	250 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	600 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN