FF600R12ME4EB11BOSA1
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см. техническую документацию
см. техническую документацию
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Описание
Discrete Semiconductor Products\Transistors - IGBTs - Modules
Модуль IGBT Trench Field Stop Half Bridge 1200V 995A 4050W Модуль для монтажа на шасси
Технические параметры
| Base Product Number | FF600R12 -> |
| Configuration | Half Bridge |
| Current - Collector (Ic) (Max) | 995A |
| Current - Collector Cutoff (Max) | 3mA |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 37nF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Chassis Mount |
| NTC Thermistor | Yes |
| Operating Temperature | -40В°C ~ 150В°C |
| Package | Tray |
| Package / Case | Module |
| Power - Max | 4050W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 600A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 600 A |
| Maximum Gate Emitter Voltage | 20V |
| Maximum Power Dissipation | 20 mW |
| Number of Transistors | 2 |
| Package Type | ECONODUAL |
| Pin Count | 13 |
| Transistor Configuration | Common Emitter |
| Вес, г | 0.36 |
Техническая документация
Datasheet FF600R12ME4EB11BOSA1
pdf, 615 КБ
Дополнительная информация
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