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BUK9Y153-100E,115, MOSFET BUK9Y153-100E/ SOT669/LFPAK

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10233 шт., срок 6-8 недель

180 руб.

от 10 шт. — 160 руб.

от 100 шт. — 97 руб.

от 500 шт. — 78.31 руб.

Добавить в корзину 1 шт. на сумму 180 руб.

Альтернативные предложения1

Номенклатурный номер: 8006225968

Артикул: BUK9Y153-100E,115

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

BUKx Automotive MOSFETs
Nexperia BUKx Automotive MOSFETs offer logic level N-channel MOSFETs featuring TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high-performance automotive applications.

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	1500
Id - Continuous Drain Current:	9.4 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-669-5
Part # Aliases:	934067042115
Pd - Power Dissipation:	37 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	6.8 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	122 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-15 V, +15 V
Vgs th - Gate-Source Threshold Voltage:	1.7 V
Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Continuous Drain Current (A)	9.4
Maximum Drain Source Resistance (mOhm)	146@10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	2.1
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	37000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	4
Pin Count	5
PPAP	Unknown
Process Technology	TMOS
Product Category	Power MOSFET
Supplier Package	LFPAK
Supplier Temperature Grade	Automotive
Tab	Tab
Typical Fall Time (ns)	7.9
Typical Gate Charge @ Vgs (nC)	6.8@5V
Typical Input Capacitance @ Vds (pF)	537@25V
Typical Rise Time (ns)	10.9
Typical Turn-Off Delay Time (ns)	10
Typical Turn-On Delay Time (ns)	6
Вес, г	63