SSM3K7002KFU,LF, MOSFET Small-signal MOSFET ID=0.4A VDSS=60V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
SSM3 High Current MOSFETsToshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 1 S |
| Id - Continuous Drain Current: | 400 mA |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-323-3 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 700 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 390 pC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 1.05 Ohms |
| Rise Time: | 3.6 ns |
| Series: | SSM3K7002KFU |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | U-MOSVII-H |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 38 ns |
| Typical Turn-On Delay Time: | 5.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 224 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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