NGTB15N120FL2WG, IGBT Transistors 1200V/15A VERY FAST IGBT
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
294W 30A 1.2kV FS(Field Stop) TO-247-3 IGBTs ROHS
Технические параметры
| Brand: | onsemi |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 30 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Packaging: | Tube |
| Pd - Power Dissipation: | 294 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Collector Current (Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Diode Reverse Recovery Time (Trr) | 110ns |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V, 15A |
| Input Capacitance (Cies@Vce) | - |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 294W |
| Total Gate Charge (Qg@Ic,Vge) | 109nC |
| Turn?off Delay Time (Td(off)) | 132ns |
| Turn?off Switching Loss (Eoff) | 0.37mJ |
| Turn?on Delay Time (Td(on)) | 64ns |
| Turn?on Switching Loss (Eon) | 1.2mJ |
| Type | FS(Field Stop) |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 325 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
