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2SC5706-TL-H, RF Bipolar Transistors BIP NPN 5A 50V

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290 руб.

от 10 шт. — 230 руб.

от 100 шт. — 165 руб.

от 700 шт. — 117.23 руб.

Добавить в корзину 1 шт. на сумму 290 руб.

Номенклатурный номер: 8006236909

Артикул: 2SC5706-TL-H

Бренд: ON Semiconductor***

Описание

TRANSISTOR, NPN, 50V, 5A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:400MHz; Power Dissipation Pd:15W; DC Collector Current:5A; DC Current Gain hFE:200hFE; Transistor

Технические параметры

Brand	ON Semiconductor
Collector- Base Voltage VCBO	100 V
Collector- Emitter Voltage VCEO Max	50 V
Collector-Emitter Saturation Voltage	160 mV
Configuration	Single
Continuous Collector Current	5 A
DC Collector/Base Gain hfe Min	200
DC Current Gain hFE Max	560
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity	700
Gain Bandwidth Product fT	400 MHz
Manufacturer	ON Semiconductor
Maximum DC Collector Current	7.5 A
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Packaging	Reel
Pd - Power Dissipation	15 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	2SC5706
Transistor Polarity	NPN
Unit Weight	0.063493 oz
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Voltage	50 V
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	1 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	15 W
Minimum DC Current Gain	200
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TP-FA
Pin Count	4
Transistor Configuration	Single
Transistor Type	NPN
Вес, г	1