SSM3K15F,LF, MOSFET LowON Res MOSFET ID=0.1A VDSS=30V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
π-MOS VI MOSFETsToshiba -MOS VI MOSFETs are Low Voltage Gate Drive devices, offered in both P-channel and N-channel polarity, and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The -MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. The -MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 25 mS |
Id - Continuous Drain Current: | 100 mA |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TO-263-3 |
Packaging: | Reel, Cut Tape |
Pd - Power Dissipation: | 200 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 4 Ohms |
Series: | SSM3K15F |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MOSVI |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 180 ns |
Typical Turn-On Delay Time: | 50 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Base Product Number | 2SC6010 -> |
Current - Continuous Drain (Id) @ 25В°C | 100mA (Ta) |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
ECCN | EAR99 |
FET Type | N-Channel |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 7.8pF @ 3V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | 150В°C |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Power Dissipation (Max) | 200mW (Ta) |
Rds On (Max) @ Id, Vgs | 4Ohm @ 10mA, 4V |
RoHS Status | RoHS Compliant |
Series | ПЂ-MOSIV -> |
Supplier Device Package | S-Mini |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 1.5V @ 100ВµA |
FET Feature | - |
Manufacturer | Toshiba Semiconductor and Storage |
Packaging | Tape & Reel(TR) |
Part Status | Active |
Вес, г | 4 |
Техническая документация
Datasheet SSM3K15F,LF
pdf, 177 КБ
Datasheet SSM3K15F.LF
pdf, 173 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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