IXFH44N50P, MOSFET 500V 44A

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Номенклатурный номер: 8006248659

Артикул: IXFH44N50P

Описание Транзистор N-MOSFET, Polar™, полевой, 500В, 44А, 658Вт, TO247-3 Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	44 A
Maximum Drain Source Resistance	140 mΩ
Maximum Drain Source Voltage	500 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	650 W
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247AD
Pin Count	3
Series	HiperFET, Polar
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	98 nC @ 10 V
Width	5.3mm
Case	TO247-3
Drain current	44A
Drain-source voltage	500V
Gate charge	98nC
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	IXYS
Mounting	THT
On-state resistance	0.14Ω
Polarisation	unipolar
Power dissipation	658W
Reverse recovery time	200ns
Technology	HiPerFET™, Polar™
Type of transistor	N-MOSFET
Вес, г	1