MMBF170

Фото 1/3 MMBF170
Изображения служат только для ознакомления,
см. техническую документацию
97 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт.47 руб.
от 10 шт.30 руб.
от 100 шт.14.49 руб.
Добавить в корзину 2 шт. на сумму 194 руб.
Альтернативные предложения1
Номенклатурный номер: 8006462518
Бренд / Производитель: ON Semiconductor***

Описание

Электроэлемент
MOSFET, N, 60V, 0.5A, SOT-23, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Temperature:25°C; Device Marking:MMBF170; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:800mA; SMD Marking:MMBF170; Tape Width:8mm; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

Технические параметры

Current - Continuous Drain (Id) @ 25В°C 500mA(Ta)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Manufacturer ON Semiconductor
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C(TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel(TR)
Part Status Active
Power Dissipation (Max) 300mW(Ta)
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
Series -
Supplier Device Package SOT-23
Technology MOSFET(Metal Oxide)
Vgs (Max) В±20V
Vgs(th) (Max) @ Id 3V @ 1mA
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 500 mA
Maximum Drain Source Resistance 5 Ω
Maximum Drain Source Voltage 60 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 300 mW
Minimum Gate Threshold Voltage 0.8V
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Transistor Material Si
Width 1.3mm
Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Id - Continuous Drain Current: 500 mA
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-23-3
Part # Aliases: MMBF170_NL
Pd - Power Dissipation: 300 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signals
Rds On - Drain-Source Resistance: 5 Ohms
Series: MMBF170
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: MOSFET
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Вес, г 0.1

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 904 КБ
MMBF170
pdf, 1298 КБ
Документация
pdf, 903 КБ
BS170, MMBF170
pdf, 837 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов