BC859CE6327HTSA1
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см. техническую документацию
см. техническую документацию
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Описание
Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single
Биполярный (BJT) транзистор PNP 30V 100mA 250MHz 330mW Surface Mount SOT-23-3
Технические параметры
Base Product Number | BC859 -> |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
ECCN | EAR99 |
Frequency - Transition | 250MHz |
HTSUS | 8541.21.0075 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Power - Max | 330mW |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | SOT-23-3 |
Transistor Type | PNP |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Automotive | Yes |
Category | Bipolar Small Signal |
Maximum Collector Base Voltage - (V) | 30 |
Maximum Collector Emitter Voltage - (V) | 30 |
Maximum DC Collector Current - (A) | 0.1 |
Maximum Emitter Base Voltage - (V) | 5 |
Maximum Operating Temperature - (?C) | 150 |
Maximum Power Dissipation - (mW) | 330 |
Maximum Transition Frequency - (MHz) | 250(Typ) |
Military Qualified | No |
Minimum DC Current Gain | 420@2mA@5V |
Minimum Operating Temperature - (?C) | -65 |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Pin Count | 3 |
Standard Package Name | SOT-23 |
Supplier Package | SOT-23 |
Automotive Qualification Standard | AEC-Q101 |
Base Emitter Saturation Voltage Max. (Vbe(sat)) | 850 mV |
Collector Emitter Saturation Voltage Max. (Vce(sat)) | 650 mV |
Collector-Base Voltage (Vcbo) | 30 V |
Collector-Emitter Voltage (Vceo) | 30 V |
Configuration | Single |
Continuous Collector Current (Ic) | 100 mA |
DC Current Gain (hFE) | 420 |
Emitter-Base Voltage (Vebo) | 5 V |
MSL | Level-1 |
Operating Temperature Max. | 150 °C |
Package Type | SC-59 |
Pins | 3 |
Power Dissipation (Pd) | 330 mW |
Transistor Polarity | PNP |
Transit Frequency | 250 MHz |
Техническая документация
Datasheet BC857B
pdf, 861 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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