SSM3K336R,LF

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12984 шт., срок 7-9 недель

130 руб.

Мин. кол-во для заказа 2 шт.

Добавить в корзину 2 шт. на сумму 260 руб.

Альтернативные предложения2

Номенклатурный номер: 8006903593

Бренд: Toshiba

30V 3A 67Ω@10V,2A 2W 2.5V@0.1mA N Channel SOT-23-3 MOSFETs ROHS

Continuous Drain Current (Id)	3A
Drain Source On Resistance (RDS(on)@Vgs,Id)	67Ω@10V, 2A
Drain Source Voltage (Vdss)	30V
Gate Threshold Voltage (Vgs(th)@Id)	2.5V@0.1mA
Input Capacitance (Ciss@Vds)	126pF@15V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	2W
Reverse Transfer Capacitance (Crss@Vds)	8pF@15V
Total Gate Charge (Qg@Vgs)	1.7nC@4.5V
Type	N Channel
Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Fall Time:	8 ns
Forward Transconductance - Min:	5 S
Id - Continuous Drain Current:	3 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-23F-3
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	1.7 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	95 mOhms
Rise Time:	7 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	8 ns
Typical Turn-On Delay Time:	7 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V