2SCR513P5T100

128 шт. со склада г.Москва, срок 10-11 дней
180 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт.120 руб.
от 10 шт.94 руб.
от 100 шт.74.88 руб.
Добавить в корзину 2 шт. на сумму 360 руб.
Альтернативные предложения3
Номенклатурный номер: 8007155308
Бренд: Rohm

Описание

Электроэлемент
TRANS, NPN, 50V, 1A, 150DEG C, 2W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:360MHz; Power Dissipation Pd:2W; DC Collector Current:1A; DC Current Gain hFE:180hFE; Transistor Case Style:SOT-89; No. of Pins:3Pins; Operating Temperature Max:150В°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Технические параметры

Brand ROHM Semiconductor
Collector- Base Voltage VCBO 50 V
Collector- Emitter Voltage VCEO Max 50 V
Collector-Emitter Saturation Voltage 130 mV
Configuration Single
Continuous Collector Current 1 A
DC Collector/Base Gain hfe Min 180 at 50 mA, 2 V
DC Current Gain hFE Max 450 at 50 mA, 2 V
Emitter- Base Voltage VEBO 6 V
Factory Pack Quantity 1000
Gain Bandwidth Product fT 360 MHz
Manufacturer ROHM Semiconductor
Maximum DC Collector Current 1 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SC-62-3
Packaging Reel
Pd - Power Dissipation 500 mW
Product Category Bipolar Transistors-BJT
RoHS Details
Series 2SxR
Technology Si
Transistor Polarity NPN
Base Product Number 2SCR513 ->
Current - Collector (Ic) (Max) 1A
Current - Collector Cutoff (Max) 1ВµA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 50mA, 2V
ECCN EAR99
Frequency - Transition 360MHz
HTSUS 8541.21.0075
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature 150В°C (TJ)
Other Related Documents http://rohmfs.rohm.com/en/techdata_basic/transisto
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Power - Max 500mW
REACH Status REACH Affected
RoHS Status ROHS3 Compliant
Simulation Models http://rohmfs.rohm.com/en/products/library/spice/d
Supplier Device Package MPT3
Transistor Type NPN
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Collector Current (Ic) 1A
Collector Cut-Off Current (Icbo) 1uA
Collector-Emitter Breakdown Voltage (Vceo) 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 130mV@500mA, 25mA
DC Current Gain (hFE@Ic,Vce) 180@50mA, 2V
Power Dissipation (Pd) 500mW
Transition Frequency (fT) 360MHz
Вес, г 0.45

Техническая документация

Datasheet 2SCR513P5T100
pdf, 1584 КБ
Документация
pdf, 1838 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

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