FGY40T120SMD, IGBT Transistors 1200 V, 40 A Field Stop Trench IGBT
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см. техническую документацию
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2 380 руб.
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2 370.37 руб.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
1200V Field Stop Trench IGBTsonsemi 1200V Field Stop Trench IGBTs feature minimized conduction losses by having a VCE(SAT) of 1.8V, lower than previous fast switching NPT IGBTs. The 1200V field stop trench IGBTs target hard switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders. The 1200V field stop trench IGBT series operates at high switching frequencies, and is 100% tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. onsemi 1200V Field Stop Trench IGBTs are available in TO-247-3, TO-247-4, and DPAK-3 packages, and are offered in 15A, 25A, and 40A ratings.
Технические параметры
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.8 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Continuous Collector Current Ic Max: | 40 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | +/-400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -25 V, +25 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 882 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | FGY40T120SMD |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 7.63 |
Техническая документация
Datasheet
pdf, 655 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
