FGH60T65SQD-F155
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Описание
Электроэлемент
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
Технические параметры
Current - Collector (Ic) (Max) | 120A |
Current - Collector Pulsed (Icm) | 240A |
Gate Charge | 79nC |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Manufacturer | ON Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C(TJ) |
Package / Case | TO-247-3 |
Part Status | Active |
Power - Max | 333W |
Reverse Recovery Time (trr) | 34.6ns |
Series | - |
Supplier Device Package | TO-247-3 |
Switching Energy | 227ВµJ(on), 100ВµJ(off) |
Td (on/off) @ 25В°C | 20.8ns/102ns |
Test Condition | 400V, 15A, 4.7Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 60A |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Channel Type | P |
Energy Rating | 50mJ |
Gate Capacitance | 3813pF |
Maximum Collector Emitter Voltage | 650 V |
Maximum Continuous Collector Current | 60 A |
Maximum Gate Emitter Voltage | ±30V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 333 W |
Minimum Operating Temperature | -55 °C |
Number of Transistors | 1 |
Package Type | TO-247 G03 |
Pin Count | 3 |
Transistor Configuration | Single |
Brand: | onsemi |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 120 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | 400 nA |
Manufacturer: | onsemi |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 333 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Maximum Collector-Emitter Voltage (V) | 650 |
Maximum Continuous Collector Current (A) | 120 |
Maximum Gate Emitter Leakage Current (uA) | 0.4 |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 175 |
Maximum Power Dissipation (mW) | 333 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Packaging | Tube |
PCB changed | 3 |
PPAP | No |
Standard Package Name | TO |
Supplier Package | TO-247 |
Tab | Tab |
Typical Collector Emitter Saturation Voltage (V) | 1.6 |
Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 151 КБ
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Datasheet FGH60T65SQD-F155
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Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов