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BUK9M7R2-40EX

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см. техническую документацию

2685 шт., срок 6-8 недель

320 руб.

от 10 шт. — 240 руб.

от 100 шт. — 171 руб.

от 500 шт. — 134.94 руб.

Добавить в корзину 1 шт. на сумму 320 руб.

Альтернативные предложения1

Номенклатурный номер: 8007630374

Бренд: Nexperia B.V.

Описание

Trans MOSFET N-CH 40V 70A Automotive 8-Pin LFPAK EP T/R

Технические параметры

Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Continuous Drain Current (A)	70
Maximum Drain Source Resistance (mOhm)	5.8@10V
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	2.1
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	79000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	Unknown
Process Technology	TMOS
Product Category	Power MOSFET
Supplier Package	LFPAK EP
Supplier Temperature Grade	Automotive
Typical Fall Time (ns)	22
Typical Gate Charge @ Vgs (nC)	19.7@5V
Typical Input Capacitance @ Vds (pF)	1930@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	133@25V
Typical Rise Time (ns)	28.5
Typical Turn-Off Delay Time (ns)	29.9
Typical Turn-On Delay Time (ns)	13.8
Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1500
Id - Continuous Drain Current:	70 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	LFPAK-33-8
Part # Aliases:	934070079115
Pd - Power Dissipation:	79 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19.7 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	5.8 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-10 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Вес, г	9