BSS123

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99 руб.
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Номенклатурный номер: 8007894535

Описание

Электроэлемент
MOSFET, N, 100V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Diss

Технические параметры

Brand ON Semiconductor/Fairchild
Channel Mode Enhancement
Configuration Single
Factory Pack Quantity 3000
Fall Time 9 ns
Forward Transconductance - Min 0.8 S
Height 1.2 mm
Id - Continuous Drain Current 170 mA
Length 2.9 mm
Manufacturer ON Semiconductor
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case SOT-23-3
Packaging Reel
Part # Aliases BSS123_NL
Pd - Power Dissipation 360 mW
Product MOSFET Small Signal
Product Category MOSFET
Rds On - Drain-Source Resistance 6 Ohms
Rise Time 9 ns
RoHS Details
Series BSS123
Technology Si
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Type FET
Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 1.7 ns
Vds - Drain-Source Breakdown Voltage 100 V
Vgs - Gate-Source Voltage 20 V
Width 1.3 mm
Channel Type N
Maximum Continuous Drain Current 170 mA
Maximum Drain Source Resistance 6 Ω
Maximum Drain Source Voltage 100 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Gate Threshold Voltage 2V
Maximum Power Dissipation 360 mW
Minimum Gate Threshold Voltage 0.8V
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Transistor Material Si
Typical Gate Charge @ Vgs 1.8 nC @ 10 V
Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 9 ns
Forward Transconductance - Min: 0.8 S
Id - Continuous Drain Current: 170 mA
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: SOT-23-3
Part # Aliases: BSS123_NL
Pd - Power Dissipation: 300 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signals
Qg - Gate Charge: 2.5 nC
Rds On - Drain-Source Resistance: 6 Ohms
Rise Time: 9 ns
Series: BSS123
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: FET
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 1.7 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Вес, г 0.05

Техническая документация

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Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов