SIHG32N50D-GE3
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1 650 руб.
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1 510 руб.
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Описание
Электроэлемент
MOSFET, N-CH, 500V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 30A(Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550pF @ 100V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 390W(Tc) |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 16A, 10V |
| Series | - |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Base Product Number | SIHG32 -> |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Package | Tube |
| RoHS Status | ROHS3 Compliant |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 500 |
| Fall Time: | 55 ns |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 390 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 64 nC |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Rise Time: | 75 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 58 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Вес, г | 6.353 |
Техническая документация
Datasheet
pdf, 473 КБ
Datasheet SIHG32N50D-GE3
pdf, 204 КБ
Трёхмерное изображение изделия
pdf, 57 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
