SQ2318BES-T1_GE3

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170 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 120 руб.

от 10 шт. — 97 руб.

от 48 шт. — 80.50 руб.

Добавить в корзину 2 шт. на сумму 340 руб.

Номенклатурный номер: 8008313001

Электроэлемент

40V 8A 26.3mOhm@4A,10V 3W null SOT-23(TO-236) MOSFETs ROHS

Channel Mode	Enhancement
Continuous Drain Current	8(A)
Drain-Source On-Volt	40(V)
Gate-Source Voltage (Max)	±20(V)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-55C to 175C
Operating Temperature Classification	Military
Package Type	SOT-23
Packaging	Tape and Reel
Pin Count	3
Polarity	N
Power Dissipation	3(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	2.9 ns
Id - Continuous Drain Current:	8 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Part # Aliases:	SQ2318BES
Pd - Power Dissipation:	3 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	6.7 nC
Rds On - Drain-Source Resistance:	26.3 mOhms
Rise Time:	3.7 ns
Series:	SQ
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15.6 ns
Typical Turn-On Delay Time:	7.8 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Channel Type	N
Maximum Continuous Drain Current	8 A
Maximum Drain Source Resistance	0.021 Ω
Maximum Drain Source Voltage	40 V
Maximum Gate Threshold Voltage	1.5 → 2.5V
Mounting Type	Surface Mount
Number of Elements per Chip	1