STF40N60M2
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Альтернативные предложения2
Описание
Электроэлемент
MOSFET, N-CH, 600V, 34A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po
Технические параметры
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 11 ns |
| Id - Continuous Drain Current | 34 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 40 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 57 nC |
| Rds On - Drain-Source Resistance | 88 mOhms |
| Rise Time | 13.5 ns |
| RoHS | Details |
| Series | MDmesh M2 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 96 ns |
| Typical Turn-On Delay Time | 20.5 ns |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 34 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 40 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 57 nC |
| Rds On - Drain-Source Resistance: | 88 mOhms |
| Rise Time: | 13.5 ns |
| Series: | STF40N60M2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 96 ns |
| Typical Turn-On Delay Time: | 20.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 2.3 |
Техническая документация
Datasheet
pdf, 868 КБ
Документация
pdf, 1596 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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