FGY120T65SPD-F085
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Описание
Field Stop IGBTs
onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Технические параметры
Collector Emitter Saturation Voltage | 1.5В |
Collector Emitter Voltage Max | 650В |
Continuous Collector Current | 120А |
Power Dissipation | 882Вт |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | Field Stop Trench Series |
Максимальная Рабочая Температура | 175°C |
Монтаж транзистора | Through Hole |
Стандарты Автомобильной Промышленности | AEC-Q101 |
Стиль Корпуса Транзистора | TO-247 |
Brand: | onsemi/Fairchild |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.5 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 240 A |
Continuous Collector Current Ic Max: | 240 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | +/-250 nA |
Manufacturer: | onsemi |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | FGY120T65SPD_F085 |
Pd - Power Dissipation: | 882 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Qualification: | AEC-Q101 |
Series: | FGY120T65S_F085 |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 0.3 |
Техническая документация
Datasheet
pdf, 472 КБ
Datasheet FGY120T65SPD-F085
pdf, 579 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов