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SQM40061EL_GE3

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см. техническую документацию

600 руб.

от 2 шт. — 490 руб.

от 5 шт. — 420 руб.

Добавить в корзину 1 шт. на сумму 600 руб.

Номенклатурный номер: 8008547169

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Электроэлемент

MOSFET, P-CH, -40V, -100A, 175DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:

Технические параметры

Current - Continuous Drain (Id) @ 25В°C	100A(Tc)
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	14500pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-263-3, DВІPak(2 Leads+Tab), TO-263AB
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	150W(Tc)
Rds On (Max) @ Id, Vgs	5.1mOhm @ 30A, 10V
Series	Automotive, AEC-Q101, TrenchFETВ®
Supplier Device Package	TO-263(DВІPak)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	800
Fall Time:	160 ns
Forward Transconductance - Min:	103 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	D2PAK-3(TO-263-3)
Pd - Power Dissipation:	150 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	185 nC
Rds On - Drain-Source Resistance:	5.1 mOhms
Rise Time:	180 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	145 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	3