TPH1R204PL.L1Q

Изображения служат только для ознакомления,
см. техническую документацию

26 шт. со склада г.Москва, срок 8-9 дней

580 руб.

Добавить в корзину 1 шт. на сумму 580 руб.

Альтернативные предложения2

Номенклатурный номер: 8008607230

Бренд: Toshiba

Электроэлемент

X35 Pb-F Power Mosfet Transistor N-Ch Sop-Adv Moq=3000 Pd=132W F=1Mhz

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	246
Maximum Drain Source Resistance - (mOhm)	1.24@10V
Maximum Drain Source Voltage - (V)	40
Maximum Gate Source Voltage - (V)	??20
Maximum Gate Threshold Voltage - (V)	2.4
Maximum Power Dissipation - (mW)	3000
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~175
Pin Count	8
Process Technology	U-MOSIX-H
Standard Package Name	SOP
Supplier Package	SOP Advance
Typical Gate Charge @ 10V - (nC)	74
Typical Gate Charge @ Vgs - (nC)	74@10VI34@4.5V
Typical Input Capacitance @ Vds - (pF)	5500@20V
Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	10 ns
Id - Continuous Drain Current:	150 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOP-8
Pd - Power Dissipation:	132 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	74 nC
Rds On - Drain-Source Resistance:	2.1 mOhms
Rise Time:	13 ns
Series:	U-MOSIX-H
Subcategory:	MOSFETs
Technology:	Si
Tradename:	U-MOSIX-H
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	33 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Вес, г	0.08