MMBFJ112

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140 руб.

Мин. кол-во для заказа 2 шт.

от 10 шт. — 99 руб.

от 100 шт. — 46 руб.

от 500 шт. — 37.79 руб.

Добавить в корзину 2 шт. на сумму 280 руб.

Альтернативные предложения1

Номенклатурный номер: 8008817596

Описание Транзистор: N-JFET, полевой, 350мВт, SOT23, 50мА Характеристики

Brand:	onsemi/Fairchild
Configuration:	Single
Drain-Source Current at Vgs=0:	4 mA to 20 mA
Factory Pack Quantity: Factory Pack Quantity:	3000
Gate-Source Cutoff Voltage:	-5 V
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Operating Temperature Range:	-55 C to+150 C
Package / Case:	SOT-23-3
Part # Aliases:	MMBFJ112_NL
Pd - Power Dissipation:	350 mW
Product Category:	JFET
Product Type:	JFETs
Rds On - Drain-Source Resistance:	50 Ohms
Series:	MMBFJ112
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	N-Channel
Type:	JFET
Vgs - Gate-Source Breakdown Voltage:	-35 V
Channel Type	N
Configuration	Single
Drain Gate On-Capacitance	28pF
Idss Drain-Source Cut-off Current	min.5mA
Maximum Drain Gate Voltage	35V
Maximum Drain Source Resistance	50 Ω
Maximum Gate Source Voltage	-35 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Pin Count	3
Source Gate On-Capacitance	28pF
Transistor Configuration	Single
Width	1.3mm
Drain-Gate Voltage (Max)	35(V)
Gate-Source Voltage (Max)	-35(V)
Mounting	Surface Mount
Operating Temperature (Max)	150C
Operating Temperature (Min)	-55C
Operating Temperature Classification	Military
Packaging	Tape and Reel
Rad Hardened	No