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SI2374DS-T1-GE3, Транзистор полевой MOSFET N-канальный 20В 4.5A 3-Pin TO-236 лента на катушке

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см. техническую документацию

49 руб.

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Добавить в корзину 10 шт. на сумму 490 руб.

Номенклатурный номер: 8009451846

Артикул: SI2374DS-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой MOSFET N-канальный 20В 4.5A 3-Pin TO-236 лента на катушке

Технические параметры

Корпус	SOT23-3
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	5.9 A
Maximum Drain Source Resistance	41 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	±8 V
Maximum Gate Threshold Voltage	1V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.7 W
Minimum Gate Threshold Voltage	0.4V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	13.4 nC @ 10 V
Width	1.4mm
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	10 ns
Id - Continuous Drain Current:	5.9 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Part # Aliases:	SI2374DS-T1-BE3
Pd - Power Dissipation:	1.7 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7.7 nC
Rds On - Drain-Source Resistance:	30 mOhms
Rise Time:	23 ns
Series:	SI2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	5.9
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	4.5
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	30@4.5V
Maximum Drain Source Voltage (V)	20
Maximum Gate Resistance (Ohm)	1.2
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±8
Maximum Gate Threshold Voltage (V)	1
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	175
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	8
Maximum Power Dissipation (mW)	960
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.96
Maximum Pulsed Drain Current @ TC=25°C (A)	25
Minimum Gate Resistance (Ohm)	0.12
Minimum Gate Threshold Voltage (V)	0.4
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Diode Forward Voltage (V)	0.8
Typical Fall Time (ns)	10
Typical Gate Charge @ 10V (nC)	13.4
Typical Gate Charge @ Vgs (nC)	13.4@10V\|7.7@4.5V
Typical Gate Plateau Voltage (V)	1
Typical Gate to Drain Charge (nC)	1
Typical Gate to Source Charge (nC)	1
Typical Input Capacitance @ Vds (pF)	735@10V
Typical Output Capacitance (pF)	110
Typical Reverse Recovery Charge (nC)	6
Typical Reverse Recovery Time (ns)	13
Typical Reverse Transfer Capacitance @ Vds (pF)	40@10V
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	16
Typical Turn-On Delay Time (ns)	10
Вес, г	0.06