STP20N95K5, N-Channel MOSFET, 17.5 A, 950 V, 3-Pin TO-220 STP20N95K5
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40 шт., срок 7 недель
1 370 руб.
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
MDmesh K5 Power MOSFETsSTMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.5V |
| Maximum Continuous Drain Current | 17.5 A |
| Maximum Drain Source Resistance | 330 mΩ |
| Maximum Drain Source Voltage | 950 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 250 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Series | MDmesh, SuperMESH |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 17.5 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 250 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Rds On - Drain-Source Resistance: | 330 mOhms |
| Series: | STP20N95K5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 950 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 17.5 |
| Maximum Drain Source Resistance (mOhm) | 330@10V |
| Maximum Drain Source Voltage (V) | 950 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 250000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 18 |
| Typical Gate Charge @ 10V (nC) | 48 |
| Typical Gate Charge @ Vgs (nC) | 48@10V |
| Typical Input Capacitance @ Vds (pF) | 1550@100V |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Typical Turn-On Delay Time (ns) | 18 |
| Вес, г | 3.5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 916 КБ
Datasheet
pdf, 952 КБ
Datasheet STW20N95K5
pdf, 1458 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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