TPH6R30ANL.L1Q

Изображения служат только для ознакомления,
см. техническую документацию

28 шт. со склада г.Москва, срок 8-9 дней

610 руб.

Добавить в корзину 1 шт. на сумму 610 руб.

Альтернативные предложения1

Номенклатурный номер: 8010107291

Бренд: Toshiba

Электроэлемент

Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Quad Drain Triple Source
Maximum Continuous Drain Current - (A)	66
Maximum Drain Source Resistance - (mOhm)	6300@10V
Maximum Drain Source Voltage - (V)	100
Maximum Gate Source Voltage - (V)	??20
Maximum Power Dissipation - (mW)	2500
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Pin Count	8
Standard Package Name	SOP
Supplier Package	SOP Advance
Typical Gate Charge @ 10V - (nC)	55
Typical Gate Charge @ Vgs - (nC)	27@4.5VI55@10V
Typical Input Capacitance @ Vds - (pF)	3300@50V
Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	12 ns
Id - Continuous Drain Current:	66 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOP-Advance-8
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	54 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	55 nC
Rds On - Drain-Source Resistance:	5.1 mOhms
Rise Time:	7 ns
Series:	TPH6R30ANL
Subcategory:	MOSFETs
Technology:	Si
Tradename:	U-MOSVIII-H
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	18 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V