BFU580GX
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см. техническую документацию
см. техническую документацию
740 руб.
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Описание
Электроэлемент
TRANSISTOR, AUTO, RF, NPN, 12V, 11GHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:11GHz; Power Dissipation Pd:1W; DC Collector Current:30mA; DC Current Gain hFE:95hFE; RF Transistor Case:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150В°C; Product Range:BFU580G Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
Технические параметры
| Current - Collector (Ic) (Max) | 60mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 30mA, 8V |
| Family | Transistors-Bipolar(BJT)-RF |
| Frequency - Transition | 11GHz |
| Gain | 10.5dB |
| Manufacturer | NXP Semiconductors |
| Mounting Type | Surface Mount |
| Noise Figure (dB Typ @ f) | 1.4dB @ 1.8GHz |
| Package / Case | TO-261-4, TO-261AA |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Power - Max | 1W |
| Standard Package | 1 |
| Supplier Device Package | SOT-223 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Brand: | NXP Semiconductors |
| Collector- Base Voltage VCBO: | 24 V |
| Collector- Emitter Voltage VCEO Max: | 16 V |
| Configuration: | Single |
| Continuous Collector Current: | 30 mA |
| DC Collector/Base Gain hfe Min: | 60 |
| DC Current Gain hFE Max: | 130 |
| Emitter- Base Voltage VEBO: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 11 GHz |
| Manufacturer: | NXP |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Operating Frequency: | 900 MHz |
| Operating Temperature Range: | -40 C to+150 C |
| Package / Case: | SOT-223-4 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | 934067974115 |
| Pd - Power Dissipation: | 1000 mW |
| Product Category: | RF Bipolar Transistors |
| Product Type: | RF Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Transistor Type: | Bipolar Wideband |
| Type: | Wideband RF Transistor |
| Вес, г | 0.3 |
Техническая документация
Datasheet
pdf, 304 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
