DMP3098L-7, Транзистор P-MOSFET, полевой, -30В, -2,9А, 1,08Вт, SOT23

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Номенклатурный номер: 8016716841

Артикул: DMP3098L-7

Бренд: DIODES INC.

Описание Транзистор P-MOSFET, полевой, -30В, -2,9А, 1,08Вт, SOT23

Continuous Drain Current (Id) @ 25В°C	3.8A
Power Dissipation-Max (Ta=25В°C)	1.08W
Rds On - Drain-Source Resistance	70mО© @ 3.8A,10V
Transistor Polarity	P Channel
Vds - Drain-Source Breakdown Voltage	30V
Vgs - Gate-Source Voltage	2.1V @ 250uA
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	3.8
Maximum Drain Source Resistance (mOhm)	70 10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1080
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	SOT-23
Supplier Package	SOT-23
Typical Fall Time (ns)	9.5
Typical Gate Charge @ 10V (nC)	7.8
Typical Gate Charge @ Vgs (nC)	7.8 10V\|4 4.5V
Typical Input Capacitance @ Vds (pF)	336 25V
Typical Rise Time (ns)	5
Typical Turn-Off Delay Time (ns)	17.6
Typical Turn-On Delay Time (ns)	6
Maximum Continuous Drain Current	3.8 A
Maximum Drain Source Resistance	120 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2.1V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.08 W
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	7.8 nC @ 10 V
Width	1.4mm
Вес, г	0.008