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ZXM64P02XTA, Транзистор: P-MOSFET; полевой; -20В; -2,8А; Idm: -19А; 1,1Вт; MSOP8

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250 руб.

от 10 шт. — 170 руб.

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Номенклатурный номер: 8017551990

Артикул: ZXM64P02XTA

Бренд: DIODES INC.

Описание

P-канал 20 В, 3,5 А (Ta) 1,1 Вт (Ta), поверхностный монтаж 8-MSOP

Технические параметры

Current - Continuous Drain (Id) @ 25В°C	3.5A (Ta)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.9nC @ 4.5V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 15V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Power Dissipation (Max)	1.1W (Ta)
Rds On (Max) @ Id, Vgs	90mOhm @ 2.4A, 4.5V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	8-MSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±12V
Vgs(th) (Max) @ Id	700mV @ 250ВµA
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	12.3 ns
Id - Continuous Drain Current:	3.5 A
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	MSOP-8
Pd - Power Dissipation:	1.1 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Qg - Gate Charge:	6.9 nC
Rds On - Drain-Source Resistance:	130 mOhms
Rise Time:	12.3 ns
Series:	ZXM64
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	45.5 ns
Typical Turn-On Delay Time:	5.6 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	700 mV
Вес, г	0.1