2SK208-Y(TE85L,F), SC-59 JFETs

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9140 шт., срок 7 недель

53 руб.

Кратность заказа 5 шт.

Добавить в корзину 5 шт. на сумму 265 руб.

Альтернативные предложения3

Номенклатурный номер: 8017597156

Артикул: 2SK208-Y(TE85L,F)

Бренд: Toshiba

100mW 1.2mA@10V N-Channel 50V SC-59 JFETs ROHS

Drain Current (Idss@Vds,Vgs=0)	1.2mA@10V
FET Type	N-Channel
Gate-Source Breakdown Voltage (V(BR)GSS)	50V
Gate-Source Cutoff Voltage (VGS(off)@ID)	400mV@100nA
Input Capacitance (Ciss@Vds)	8.2pF@10V
Operating Temperature	-
Static Drain-Source On Resistance (RDS(on))	-
Total Device Dissipation (Pd)	100mW
Base Product Number	TC74VCX162 ->
Current - Drain (Idss) @ Vds (Vgs=0)	1.2mA @ 10V
Current Drain (Id) - Max	6.5mA
ECCN	EAR99
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	8.2pF @ 10V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	100mW
RoHS Status	RoHS Compliant
Supplier Device Package	S-Mini
Voltage - Breakdown (V(BR)GSS)	50V
Voltage - Cutoff (VGS off) @ Id	400mV @ 100nA
Pd - Power Dissipation	100mW
Transistor Polarity	N Trench
Brand:	Toshiba
Configuration:	Single
Drain-Source Current at Vgs=0:	1.2 mA
Factory Pack Quantity:	3000
Gate-Source Cut-off Voltage:	-5 V
Id - Continuous Drain Current:	6.5 mA
Manufacturer:	Toshiba
Mounting Style:	SMD/SMT
Package/Case:	SC-59-3
Pd - Power Dissipation:	100 mW
Product Category:	JFET
Product Type:	JFETs
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	N-Channel
Type:	JFET
Vds - Drain-Source Breakdown Voltage:	10 V
Vgs - Gate-Source Breakdown Voltage:	-30 V
Вес, г	0.008