Главная › Электронные компоненты › Транзисторы › Биполярные (BJTs) › Toshiba › 2SC4116-GR,LF, 100nA 50V 100mW 200@2mA,6V ...

2SC4116-GR,LF, 100nA 50V 100mW 200@2mA,6V 150mA 80MHz 100mV@100mA,10mA NPN +125°C@(Tj) SOT-323(SC-70) BIpolar TransIstors - BJT

Изображения служат только для ознакомления,
см. техническую документацию

3240 шт., срок 7 недель

23 руб.

Кратность заказа 10 шт.

Добавить в корзину 10 шт. на сумму 230 руб.

Альтернативные предложения2

Номенклатурный номер: 8017606825

Артикул: 2SC4116-GR,LF

Бренд: Toshiba

Описание

Bipolar Transistors Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.

Технические параметры

Collector-Emitter Breakdown Voltage	50V
Maximum DC Collector Current	150mA
Pd - Power Dissipation	100mW
Transistor Type	NPN
Brand:	Toshiba
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	100 mV
Configuration:	Single
Continuous Collector Current:	150 mA
DC Collector/Base Gain hFE Min:	70
DC Current Gain hFE Max:	700
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	80 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	150 mA
Maximum Operating Temperature:	+125 C
Mounting Style:	SMD/SMT
Package/Case:	SC-70-3
Pd - Power Dissipation:	100 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.03