SSM3K333R,LF(T, 30V 6A 28mOhm@10V,5A 1W 2.5V@100uA N Channel SOT-23F MOSFETs

Изображения служат только для ознакомления,
см. техническую документацию

450 шт., срок 7 недель

22 руб.

Кратность заказа 10 шт.

Добавить в корзину 10 шт. на сумму 220 руб.

Альтернативные предложения2

Номенклатурный номер: 8017622874

Артикул: SSM3K333R,LF(T

Бренд: Toshiba

Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R

Continuous Drain Current (Id) @ 25В°C	6A
Power Dissipation-Max (Ta=25В°C)	1W
Rds On - Drain-Source Resistance	28mО© @ 5A,10V
Transistor Polarity	N Channel
Vds - Drain-Source Breakdown Voltage	30V
Vgs - Gate-Source Voltage	2.5V @ 100uA
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Flat
Material	Si
Maximum Continuous Drain Current (A)	6
Maximum Drain Source Resistance (MOhm)	28 10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	U-MOS VII-H
Product Category	Power MOSFET
Supplier Package	SOT-23F
Typical Gate Charge @ Vgs (nC)	3.4 4.5V
Typical Input Capacitance @ Vds (pF)	436 15V
кол-во в упаковке	3000
Вес, г	0.04