T2N7002AK,LM

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5750 шт., срок 7-9 недель

8 руб.

Мин. кол-во для заказа 50 шт.

Кратность заказа 10 шт.

Добавить в корзину 50 шт. на сумму 400 руб.

Альтернативные предложения2

Номенклатурный номер: 8022778363

Бренд: Toshiba

N-канал 60 В 200 мА (Ta) 320 мВт (Ta) поверхностный монтаж SOT-23

Base Product Number	2SC2655 ->
Current - Continuous Drain (Id) @ 25В°C	200mA (Ta)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.35nC @ 4.5V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	17pF @ 10V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	320mW (Ta)
Rds On (Max) @ Id, Vgs	3.9Ohm @ 100mA, 10V
RoHS Status	RoHS Compliant
Series	U-MOSVII-H ->
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.1V @ 250ВµA
Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Fall Time:	24 ns
Forward Transconductance - Min:	450 mS
Id - Continuous Drain Current:	200 mA
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-23-3
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	270 pC
Rds On - Drain-Source Resistance:	3.9 Ohms
Rise Time:	3 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	7 ns
Typical Turn-On Delay Time:	2 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V