DMC1030UFDB-7, 12V 1.36W 1V@250uA 1PCSN-Channel& 1PCSP-Channel -55°C~+150°C@(Tj) U-DFN2020-6D MOSFETs ROHS
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Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 4.9 ns, 25.4 ns |
| Id - Continuous Drain Current: | 5.1 A, 3.9 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | U-DFN2020-6 |
| Pd - Power Dissipation: | 1.36 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 23.1 nC, 20.8 nC |
| Rds On - Drain-Source Resistance: | 17 mOhms, 37 mOhms |
| Rise Time: | 7.4 ns, 12.8 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 18.8 ns, 30.7 ns |
| Typical Turn-On Delay Time: | 4.4 ns, 5.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV, 1 V |
| Вес, г | 0.03 |
Техническая документация
Datasheet
pdf, 599 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
