2SA2154CT-GR,L3F, CST-3 Bipolar Transistors - BJT

10 шт., срок 6 недель

53 руб.

Добавить в корзину 1 шт. на сумму 53 руб.

Альтернативные предложения1

Номенклатурный номер: 8017674672

Артикул: 2SA2154CT-GR,L3F

Бренд: Toshiba

Биполярный (BJT) транзистор PNP 50V 100mA 80MHz 100mW Surface Mount CST3

Base Product Number	TLP351 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
ECCN	EAR99
Frequency - Transition	80MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SC-101, SOT-883
Power - Max	100mW
RoHS Status	RoHS Compliant
Supplier Device Package	CST3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand:	Toshiba
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	180 mV
Configuration:	Single
DC Collector/Base Gain hFE Min:	120
DC Current Gain hFE Max:	400
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	10000
Gain Bandwidth Product fT:	80 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package/Case:	CST-3
Pd - Power Dissipation:	100 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Вес, г	0.05