BSZ039N06NSATMA1, N-Channel MOSFET, 102 A, 60 V, 8-Pin PQFN 3 x 3 FL BSZ039N06NSATMA1
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190 руб.
Кратность заказа 5000 шт.
Добавить в корзину 5000 шт.
на сумму 950 000 руб.
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Infineon OptiMOS Power Transistor is a N channel MOSFET which is fully qualified according to JEDEC for Industrial Applications.
Технические параметры
Channel Type | N |
Maximum Continuous Drain Current | 102 A |
Maximum Drain Source Voltage | 60 V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | PQFN 3x3 FL |
Pin Count | 8 |
Channel Mode | Enhancement |
Continuous Drain Current | 18(A) |
Drain-Source On-Volt | 60(V) |
Gate-Source Voltage (Max) | 20(V) |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Packaging | Tape and Reel |
Polarity | N |
Power Dissipation | 2.1(W) |
Rad Hardened | No |
Type | Power MOSFET |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 6 ns |
Forward Transconductance - Min: | 27 S |
Id - Continuous Drain Current: | 40 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TSDSON-8 |
Packaging: | Reel, Cut Tape |
Part # Aliases: | BSZ039N06NS SP002035226 |
Pd - Power Dissipation: | 69 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 27 nC |
Rds On - Drain-Source Resistance: | 4.6 mOhms |
Rise Time: | 7 ns |
Series: | BSZ039N06 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов