IRFR9310TRPBF, Транзистор: P-MOSFET, полевой, -400В, -1,1А, 50Вт, DPAK
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Описание
Описание Транзистор: P-MOSFET, полевой, -400В, -1,1А, 50Вт, DPAK Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Base Product Number | IRFR9310 -> |
| Current - Continuous Drain (Id) @ 25В°C | 1.8A (Tc) |
| Drain to Source Voltage (Vdss) | 400V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 1.1A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | D-Pak |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Maximum Continuous Drain Current (A) | 1.8 |
| Maximum Diode Forward Voltage (V) | 4 |
| Maximum Drain Source Resistance (mOhm) | 7000 10V |
| Maximum Drain Source Voltage (V) | 400 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 100 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 50000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 7.2 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 24 |
| Typical Gate Charge @ 10V (nC) | 13(Max) |
| Typical Gate Charge @ Vgs (nC) | 13(Max) 10V |
| Typical Gate Plateau Voltage (V) | 5.1 |
| Typical Gate to Drain Charge (nC) | 5(Max) |
| Typical Gate to Source Charge (nC) | 3.2(Max) |
| Typical Input Capacitance @ Vds (pF) | 270 25V |
| Typical Output Capacitance (pF) | 50 |
| Typical Reverse Recovery Charge (nC) | 640 |
| Typical Reverse Recovery Time (ns) | 170 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 8 25V |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 11 |
| Вес, г | 3 |
Техническая документация
Datasheet IRFR9310TRPBF
pdf, 266 КБ
Datasheet IRFR9310TRPBF
pdf, 256 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
