DMG3402L-7, Транзистор N-MOSFET, полевой, 30В, 4А, 1,4Вт, SOT23
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Описание
Описание Транзистор N-MOSFET, полевой, 30В, 4А, 1,4Вт, SOT23 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Continuous Drain Current (Id) @ 25В°C | 4A |
| Power Dissipation-Max (Ta=25В°C) | 1.4W |
| Rds On - Drain-Source Resistance | 52mО© @ 4A,10V |
| Transistor Polarity | N Channel |
| Vds - Drain-Source Breakdown Voltage | 30V |
| Vgs - Gate-Source Voltage | 1.4V @ 250uA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 4 |
| Maximum Drain Source Resistance (mOhm) | 52 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Gate Threshold Voltage (V) | 1.4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SOT-23 |
| Supplier Package | SOT-23 |
| Typical Fall Time (ns) | 2 |
| Typical Gate Charge @ 10V (nC) | 11.7 |
| Typical Gate Charge @ Vgs (nC) | 11.7 10V |
| Typical Input Capacitance @ Vds (pF) | 464 15V |
| Typical Rise Time (ns) | 1.6 |
| Typical Turn-Off Delay Time (ns) | 10.3 |
| Typical Turn-On Delay Time (ns) | 1.9 |
| Forward Diode Voltage | 1.16V |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Resistance | 85 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Gate Threshold Voltage | 1.4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.4 W |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 11.7 nC @ 10 V |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 2 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 1.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.7 nC |
| Rds On - Drain-Source Resistance: | 52 mOhms |
| Rise Time: | 1.6 ns |
| Series: | DMG3402 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 10.3 ns |
| Typical Turn-On Delay Time: | 1.9 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Вес, г | 0.01 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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