DI010N03PW, MOSFET MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
DI010N03PW N-Channel Power MOSFETsDiotec Semiconductor DI010N03PW N-Channel Power MOSFETs offer a low on-state resistance, a low gate charge (25nC typical), and fast switching times with an Avalanche rating. With a wide -55°C to +150°C junction temperature range, these components offer a 30V drain-source voltage, 1.4W power dissipation, and 20mJ single pulse avalanche energy. The QFN2x2 packaged DI010N03PW MOSFETs are for DC/DC converters, load switches, power management units, battery-powered devices, and commercial/industrial-grade applications.
Технические параметры
| Brand: | Diotec Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 22 ns |
| Id - Continuous Drain Current: | 7 A |
| Manufacturer: | Diotec Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerQFN 2x2 |
| Pd - Power Dissipation: | 1.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 25 nC |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Rise Time: | 72 ns |
| Series: | DI0XX |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | DI010N03PW |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 16 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.04 |
Техническая документация
Datasheet
pdf, 342 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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