IPZ40N04S55R4ATMA1, Silicon N-Channel MOSFET, 40 A, 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S55R4ATMA1

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300 руб.

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от 150 шт. — 236 руб.

Добавить в корзину 15 шт. на сумму 4 500 руб.

Номенклатурный номер: 8020757407

Артикул: IPZ40N04S55R4ATMA1

Semiconductors\Discrete Semiconductors\MOSFETs

The Infineon n channel normal level MOSFET used for automotive applications. It has 175°C operating temperature and 100 percent avalanche tested.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Resistance	0.0054 Ω
Maximum Drain Source Voltage	40 V
Maximum Gate Threshold Voltage	3.4V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PQFN 3x3
Pin Count	8
Series	IPZ
Transistor Material	Silicon
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	5000
Id - Continuous Drain Current:	40 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TSDSON-8
Packaging:	Reel, Cut Tape
Part # Aliases:	IPZ40N04S5-5R4 SP001153440
Pd - Power Dissipation:	48 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	23 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	5.4 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Вес, г	1