STGB10NC60HDT4, IGBT Transistors N Ch 10A 600V
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см. техническую документацию
см. техническую документацию
1098 шт., срок 7-9 недель
480 руб.
от 10 шт. —
380 руб.
от 100 шт. —
292 руб.
от 250 шт. —
265.27 руб.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Описание Транзистор N-МОП, полевой, 600В 20A 65Вт DІPak Характеристики | Категория | Транзистор |
| Тип | БТИЗ |
| Вид | IGBT |
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.9 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 20 A |
| Continuous Collector Current Ic Max: | 20 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3 |
| Pd - Power Dissipation: | 65 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGB10NC60HD |
| Subcategory: | IGBTs |
| Technology: | Si |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 10 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 65 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 20 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 65 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| PPAP | No |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Collector Emitter Saturation Voltage (V) | 1.9 |
| Brand | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current Ic Max | 20 A |
| Factory Pack Quantity | 1000 |
| Height | 4.6 mm |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | STGB10NC60HD |
| Technology | Si |
| Width | 9.35 mm |
| Вес, г | 2.24 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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