FGH50T65SQD-F155, Транзистор: IGBT; 650В; 50А; 134Вт; TO247-3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
920 руб.
от 10 шт. —
720 руб.
от 30 шт. —
629 руб.
от 100 шт. —
563.01 руб.
Добавить в корзину 1 шт.
на сумму 920 руб.
Описание
Solutions for Energy Infrastructure
onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Технические параметры
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 100 A |
| Continuous Collector Current Ic Max: | 100 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | +/-400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | FGH50T65SQD_F155 |
| Pd - Power Dissipation: | 268 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | FGH50T65SQD |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 6.87 |
Техническая документация
Datasheet
pdf, 542 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
