SICW080N120Y-BP, MOSFET
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Номенклатурный номер: 8020894902
Артикул: SICW080N120Y-BP
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
1200V SiC N-Channel MOSFETMicro Commercial Components (MCC) 1200V SiC N-Channel MOSFET is designed for high switching frequency and high blocking voltage with low on-resistance and avalanche capability. This MOSFET operates within a gate-source voltage of -4V to 18V and performs optimally at 18V. The 1200V n-channel MOSFET at operates on a temperature range of -55°C to 175°C and thermal resistance of 0.68°C /W junction to case. This MOSFET is halogen-free, lead-free/RoHS compliant, and includes epoxy with a flammability rating of UL 94 V-0. The applications include solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, and motor drivers. SICW080N120Y-BP
Технические параметры
| Brand: | Micro Commercial Components(MCC) |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 1800 |
| Id - Continuous Drain Current: | 38 A |
| Manufacturer: | Micro Commercial Components(MCC) |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Pd - Power Dissipation: | 220 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 41 nC |
| Rds On - Drain-Source Resistance: | 85 mOhms |
| Series: | SICFET |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs - Gate-Source Voltage: | -8 V, +22 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.6 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1022 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
