FF800R12KE7HPSA1, IGBT Modules MEDIUM POWER 62MM
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56 960 руб.
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48 650 руб.
от 20 шт. —
47 370 руб.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Trans IGBT Module N-CH 1200V 800A 7-Pin Tray
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.75 V |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Packaging: | Tray |
| Part # Aliases: | FF800R12KE7 SP005432766 |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | FFXR12KX7H |
| Subcategory: | IGBTs |
| Technology: | IGBT7-E7 |
| Automotive | No |
| Channel Type | N |
| Configuration | Dual |
| ECCN (US) | EAR99 |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 800 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Screw |
| Part Status | Active |
| PCB changed | 7 |
| Pin Count | 7 |
| PPAP | No |
| Typical Collector Emitter Saturation Voltage (V) | 1.5 |
Техническая документация
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