PJQ5548V-AU_R2_002A1, MOSFET 40V N-Channel Enhancement Mode MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
40V Enhancement Mode MOSFETsPANJIT 40V Enhancement Mode MOSFETs are low-voltage MOSFETs with an on-resistance of under 1Ω. These low-voltage MOSFETs are qualified based on the AEC-Q101 standard, commonly required for automotive-grade devices. The 40V enhancement mode MOSFETs are Lead-free and compliant with EU RoHS 2.0. Typical applications include low-power system products, such as notebooks, PC motherboards, tablets, and other portable consumer products.
Технические параметры
| Brand: | Panjit |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 3 ns |
| Id - Continuous Drain Current: | 45 A |
| Manufacturer: | Panjit |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DFN5060-8L |
| Pd - Power Dissipation: | 36 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9.5 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Rise Time: | 3 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 18 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 0.08 |
Техническая документация
Datasheet
pdf, 377 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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