FP25R12KT4BPSA1, IGBT Modules LOW POWER ECONO
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
1200V PIM IGBT ModulesInfineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology provides strongly reduced losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 1.85 V |
Configuration: | 3-Phase Inverter |
Continuous Collector Current at 25 C: | 25 A |
Factory Pack Quantity: Factory Pack Quantity: | 15 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -40 C |
Packaging: | Tray |
Part # Aliases: | FP25R12KT4 SP005422446 |
Pd - Power Dissipation: | 160 W |
Product Category: | IGBT Modules |
Product Type: | IGBT Modules |
Product: | IGBT Silicon Modules |
Series: | FPXR12K4G |
Subcategory: | IGBTs |
Channel Type | N |
Configuration | Common Emitter |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 25 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 160 W |
Mounting Type | Panel Mount |
Number of Transistors | 7 |
Pin Count | 23 |
Техническая документация
Datasheet
pdf, 987 КБ
Datasheet FP25R12KT4BPSA1
pdf, 813 КБ